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Ta2Si thermal oxidation: a simple route to a high-k gate dielectric on 4H-SiC

Document Type

Journal

Author

Perez-Tomas, A; Godignon, P; Montserrat, J; Millan, J; Mestres, N; Vennegues, P; Stoemenos, J

Source

ELECTROCHEMICAL AND SOLID STATE LETTERS; 2004, 7 12, pF93-pF95, 3p.

Subject

Language

English

ISSN

10990062

Online Access

Web of Science Scopus Find it@PNU

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