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Effect of substrate surface defects and Te dopant concentration on crystalline quality and electrical characteristics of AlGaAsSb epitaxial layers

Document Type

Journal

Author

Ehsani, H.; Lewis, N.; Nichols, G. J.; Danielson, L.; Dashiell, M. W.; Shellenbarger, Z. A.; Wang, C. A.

Source

JOURNAL OF CRYSTAL GROWTH; MAY 15 2006, 291 1, p77-p81, 5p.

Subject

Language

English

ISSN

18735002

Online Access

Full Text (ScienceDirect) Web of Science JCR 저널정보 Scopus Find it@PNU

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