학술논문
High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
Document Type
Author
Source
IEEE Electron Device Letters NanoLund: Centre for Nanoscience. 34(2):211-213
Subject
Language
English
ISSN
0741-3106
Abstract
We present electrical characterization of GaSb/InAs(Sb) nanowire tunnel field-effect transistors. The broken band alignment of the GaSb/InAs(Sb) heterostructure is exploited to allow for interband tunneling without a barrier, leading to high ON-current levels. We report a maximum drive current of 310 μA/μm at Vds = 0.5 V. Devices with scaled gate oxides display transconductances up to gm = 250 mS/mm at Vds = 300 mV, which are normalized to the nanowire circumference at the axial heterojunction.