학술논문

A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs

Document Type

Author

Johansson, Sofia; Berg, Martin; Persson, Karl-Magnus; Lind, Erik

Source

IEEE Transactions on Electron Devices NanoLund: Centre for Nanoscience. 60(2):776-781

Subject

transconductance
nanowire (NW)
metal–oxide–semiconductor field-effect transistor (MOSFET)
interface traps
high-$k$
frequency
border traps
InAs
InGaAs
Al2O3
HfO2
Teknik
Elektroteknik och elektronik
Engineering and Technology
Electrical Engineering
Electronic Engineering
Information Engineering
Naturvetenskap
Fysik
Den kondenserade materiens fysik
Natural Sciences
Physical Sciences
Condensed Matter Physics

Language

English

ISSN

0018-9383

Online Access

Full Text (IEEE) Open Access (SwePub) Web of Science JCR 저널정보 Scopus

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