학술논문
Threshold currents for AlGaAs quantum well lasers
Document Type
Journal Article
Author
Source
IEEE J. Quant. Electron.; (United States); QE-20:4
Subject
Language
English
Abstract
The threshold currents for AlGaAs quantum well lasers are studied theoretically. The structure dependent gain coefficient is obtained by taking into account the electron distribution in L valleys. Theoretical threshold current densities calculated using the gain coefficient agree well with reported experimental results for separate-confinement heterostructure lasers. A design procedure for low threshold current laser is elucidated. The lowest threshold currents are 570 and 53 ..mu..A per 1 ..mu..m stripe width for modified multiple quantum well lasers with 32 percent and 90 percent reflectivity facet mirrors, respectively.