부산대학교 도서관

Layers of Si nanowires produced by the metal-assisted chemical etching of (100)-oriented singlecrystal p-Si wafers with a resistivity of 1-20 Ω x cm are studied by reflectance spectroscopy, Raman spectroscopy, and photoluminescence measurements. The nanowire diameters are 20-200 nm. The wafers are supplied by three manufacturing companies and distinguished by their different lifetimes of photoexcited charge carriers. It is established that the Raman intensity for nanowires longer than 1 µm is 3-5 times higher than that for the substrates. The interband photoluminescence intensity of nanowires at the wavelength 1.12 µm is substantially higher than that of the substrates and reaches a maximum for samples with the longest bulk lifetime, suggesting a low nonradiative recombination rate at the nanowire surfaces. DOI: 10.1134/S1063782614120082
1. INTRODUCTION In recent years, there has been growing interest in silicon nanowires (SiNWs) which can be used in optoelectronics, photonics, photovoltaics, and sensorics [1-7]. SiNWs possess optical properties significantly [...]