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InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

Document Type

Article

Author

Cerba, T.; Hauchecorne, P.; Martin, M.; Moeyaert, J.; Alcotte, R.; Salem, B.; Eustache, E.; Bezard, P.; Chevalier, X.; Lombard, G.; Bassani, F.; David, S.; Beainy, G.; Tournié, E.; Patriarche, G.; Boutry, H.; Bawedin, M.; Baron, T.

Source

In Journal of Crystal Growth 15 March 2019 510:18-22

Subject

Language

ISSN

0022-0248

Online Access

Full Text (ScienceDirect 종량제) Web of Science JCR 저널정보 Scopus Find it@PNU

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