학술논문 – 법학도서관

학술논문

replay검색결과 돌아가기

search검색화면

SiON and SiO 2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum

Document Type

Article

Author

Delcroix, P.; Blonkowski, S.; Kogelschatz, M.; Rafik, M.; Gourhant, O.; JeanJean, D.; Beneyton, R.; Roy, D.; Federspiel, X.; Martin, F.; Garros, X.; Grampeix, H.; Gassilloud, R.

Source

In Microelectronic Engineering 2011 88(7):1376-1379

Subject

Language

ISSN

0167-9317

Online Access

Full Text (ScienceDirect) Web of Science JCR 저널정보 Scopus Find it@PNU

이메일