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Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

Document Type

Article

Author

Gencarelli, F.; Shimura, Y.; Kumar, A.; Vincent, B.; Moussa, A.; Vanhaeren, D.; Richard, O.; Bender, H.; Vandervorst, W.; Caymax, M.; Loo, R.; Heyns, M.

Source

In Thin Solid Films 1 September 2015 590:163-169

Subject

Language

ISSN

0040-6090

Online Access

Full Text (ScienceDirect) Web of Science JCR 저널정보 Scopus Find it@PNU

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