학술논문
I-V characteristics simulation of silicon carbide Ti/4H-SiC Schottky diode
Document Type
Conference Paper
Source
In: Proceedings of SPIE - The International Society for Optical Engineering , International Conference on Micro- and Nano-Electronics 2016. (Proceedings of SPIE - The International Society for Optical Engineering, 2016, 10224)
Subject
Language
English
ISSN
1996756X
0277786X
0277786X