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Investigation of a p–i–n Photodetector with an Absorbing Medium Based on InGaAs/GaAs Quantum Well-Dots

Document Type

Article

Author

Kryzhanovskaya, N.V.; Blokhin, S.A.; Makhov, I.S.; Moiseev, E.I.; Nadtochiy, A.M.; Fominykh, N.A.; Zubov, F.I.; Maximov, M.V.; Zhukov, A.E.; Mintairov, S.A.; Kaluyzhnyy, N.A.; Guseva, Y.A.; Kulagina, M.M.; Kolodeznyi, E.S.

Source

In: Semiconductors. (Semiconductors, December 2023, 57(13):594-598)

Subject

Language

English

ISSN

10906479
10637826

Online Access

Web of Science JCR 저널정보 Scopus Find it@PNU

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