학술논문
Low write current and strong durability in high-speed spintronics memory (spin-Hall MRAM and VoCSM) through development of a shunt-free design process and W spin-Hall electrode
Document Type
Article
Author
Source
In: Journal of Magnetism and Magnetic Materials . (Journal of Magnetism and Magnetic Materials, 1 December 2019, 491)
Subject
Language
English
ISSN
03048853