학술논문
Effect of electrode materials and fabrication methods on resistive switching behavior of poly(3-hexylthiophene-2,5-diyl)-based resistive random access memory
Document Type
Article
Author
Source
In: Journal of the Korean Physical Society . (Journal of the Korean Physical Society, May 2024, 84(10):766-771)
Subject
Language
English
ISSN
19768524
03744884
03744884