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Comphy v3.0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices

Document Type

Article

Author

Waldhoer, D.; Schleich, C.; Michl, J.; Karl, A.; Knobloch, T.; Waltl, M.; Grasser, T.; Grill, A.; Claes, D.; Franco, J.; Kaczer, B.; Rzepa, G.

Source

In: Microelectronics Reliability. (Microelectronics Reliability, July 2023, 146)

Subject

Language

English

ISSN

00262714

Online Access

Full Text (ScienceDirect 종량제) Web of Science JCR 저널정보 Scopus Find it@PNU

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