학술논문
Modeling the Effect of Gate-Drain Parasitic Capacitance of a SiC MOSFET in a Half-Bridge During the Soft Turn-Off and Hard Turn-On Transition
Document Type
Conference Paper
Author
Source
In: Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC , 2024 IEEE Applied Power Electronics Conference and Exposition, APEC 2024. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, 2024, :2419-2424)
Subject
Language
English
ISSN
10482334