학술논문
Hot-wire CVD grown microcrystalline silicon films with and without initial growing layer modification by inductive coupled plasma
Document Type
Conference
Author
Source
The 30th International Conference on Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. Plasma science Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on. :229 2003
Subject
Language
ISSN
0730-9244
Abstract
Summary form only given, as follows. Microcrystalline Si (pc-Si) films have been deposited by using five W wire filaments of 0.5 mm diameter for hot-wire chemical vapor deposition (HWCVD). We compared the HWCVD grown films with and without modification of initial growing layer by using a inductive coupled plasma system.