학술논문
Analysis of the Single-Event Latch-up Cross Section of a 16nm FinFET System-on-Chip using Backside Single-Photon Absorption Laser Testing and Correlation with Heavy Ion Data
Document Type
Periodical
Author
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. PP(99):1-1
Subject
Language
ISSN
0018-9499
1558-1578
1558-1578
Abstract
The single-event latch-up (SEL) cross section of a 16nm bulk finFET programmable system-on-chip (SoC) is investigated by combining single photon absorption (SPA) laser testing, emission microscopy and embedded instrumentation. The contributions of different SEL-sensitive areas identified by their current increase, light emission and functional signatures are measured. The effect of temperature and IO bias is evaluated. The laser results show an excellent correlation with heavy ion data, and delimit the origin of SEL in this device by excluding the occurrence of SEL in the core-logic for this technology.