학술논문
Impact of Scan Rate and Mobile Ion Concentration on the Anomalous J-V Curves of Metal Halide Perovskite-Based Memristors
Document Type
Periodical
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 44(8):1276-1279 Aug, 2023
Subject
Language
ISSN
0741-3106
1558-0563
1558-0563
Abstract
Bias voltage scan rate and mobile ion concentration have a strong influence in J-V curves of metal halide perovskite-based memristors. In addition to hysteresis, in some cases J-V curves also show an anomalous drop in current known as negative differential resistance. This feature is usually related to electrochemical reactions between the reactive metal and $\text{I}^{-}$ ions, and to air exposure. However, in devices with low-reactive electrodes, its origin is still under debate. In this work, we propose a theoretical model based on ionic-electronic drift-diffusion. This model sheds light into the ionic-electronic processes that shape hysteresis, and it helps to explain the appearance and evolution of a negative resistance in memristors with low-reactive contacts and capacitive hysteresis. Finally, experimental J-V curves are presented to validate the proposed model.