학술논문

Toward full crystal oscillator integration for RF applications
Document Type
Conference
Source
2010 IEEE International Frequency Control Symposium Frequency Control Symposium (FCS), 2010 IEEE International. :46-51 Jun, 2010
Subject
Components, Circuits, Devices and Systems
Communication, Networking and Broadcast Technologies
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Resonant frequency
Phase noise
Power supplies
Sensitivity
Layout
Language
ISSN
2327-1914
2327-1949
1075-6787
Abstract
This paper presents the performances of an integrated oscillator working at 3.3V power supply for XO applications, extended to OCXO by digital selections. It is realized in a standard 0.35µm SiGe BiCMOS technology from austriamicrosystems AG ® . Some experimental characterizations have been performed at 40 MHz and give good agreement with simulations. This die is then used to develop a miniaturized XO design on silicon substrate (8.5×8.5 mm 2 ).