학술논문
Precisely calibrated coaxial-to-microstrip transitions yield improved performance in GaAs FET characterization
Document Type
Periodical
Author
Source
IEEE Transactions on Microwave Theory and Techniques IEEE Trans. Microwave Theory Techn. Microwave Theory and Techniques, IEEE Transactions on. 38(1):62-68 Jan, 1990
Subject
Language
ISSN
0018-9480
1557-9670
1557-9670
Abstract
An approach for calibrating coaxial-to-microstrip transitions up to 26.5 GHz with high precision is presented. An ideal through, noncritical open, noncritical short and surface absorber are used as microstrip standards for the calibration. The calibration measurement and an approach for extracting the scattering parameters of the transitions are described. Error-corrected results on broadband measurements of the scattering coefficients of packaged FETs in a hybrid circuit configuration are given.ETX