학술논문
Long-term stability and thermal cycling of thermocouple contacts to Si up to 350/spl deg/C
Document Type
Conference
Author
Source
HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) High temperature electronics High Temperature Electronics, 1999. HITEN 99. The Third European Conference on. :87-90 1999
Subject
Language
Abstract
We report on the long-term stability and thermal cycling of thermocouple contacts to silicon up to 350/spl deg/C. Such contacts call be used as a lead for electric signals while at the same time measuring the temperature immediately at the semiconductor surface. Contacts were fabricated using Au based solders at temperatures between 600 and 850/spl deg/C in vacuum. Different types of thermocouple materials have been tested with good results for a type E thermocouple. The characterisation of the contacts comprises electrical measurements (I-V characteristics) and determination of elemental and phase composition by EDX mapping in the contact region. The long-term stability of the contacts has been investigated during heat treatment up to 400 h at 300/spl deg/C. Thermal cycling tests were performed between /spl sim/200/spl deg/C and 350/spl deg/C, continuously measuring the contact resistance. The tests showed a good mechanical and electrical stability of the contacts. For application temperature above 350/spl deg/C, metallic diffusion barriers or layer stacking together with special high temperature solders can be used to form electrically stable thermocouple contacts to Si.