부산대학교 도서관

In this work, we report a planar Si-based ferroelectric field-effect transistor (FEFET) characterized by a high memory window (MW) of 4.79 V, ten-year retention, and pass disturb-free characteristics. This achievement is realized through the use of a 20-nm-thick laminated Hf $_{{0}.{5}}$ Zr0.5O2 (L-HZO) film with Al2O3 (AO)-insertion layers (ILs). The 2.4-Å-thick AO-ILs effectively severed the bulk-HZO film and scaled down each FE-thickness ( ${t}_{\text {FE}}$ ) in the L-HZO. This resulted in suppression of non-FE monoclinic phase formation to less than 10%, and more notably, an increase in the coercive field ( ${E}_{C}$ ) within the FE stack. With an increase in the number of HZO-lamination ( ${N}_{\text {HZO}}$ ), the ${E}_{C}$ was enhanced by 76% in L-HZO ( ${N}_{\text {HZO}}$ = 4) compared to single-HZO (S-HZO). This led to an increase in effective polarization ( ${P}_{\text {eff}}$ ), representing the portion of remnant polarization ( ${P}_{\text {r}}$ ) uncompensated by channel-injected charge, thereby validly influencing the threshold voltage ( ${V}_{\text {T}}$ ) shift of FEFET. The augmented ${P}_{\text {eff}}$ in L-HZO (350% increase compared to S-HZO) was directly confirmed through a more pronounced ${V}_{\text {T}}$ shift by the change of ${P}_{\text {r}}$ , which was 230% steeper in L-HZO compared to S-HZO. The revealed mechanism behind the enhanced MW and reliability in laminated-FE, stemming from the increased ${P}_{\text {eff}}$ rooted in enlarged ${E}_{C}$ , paves the way for designing the FE-stack for high-density memory or neuromorphic applications.