학술논문
A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications
Document Type
Periodical
Author
Source
IEEE Journal of Solid-State Circuits IEEE J. Solid-State Circuits Solid-State Circuits, IEEE Journal of. 57(7):2024-2034 Jul, 2022
Subject
Language
ISSN
0018-9200
1558-173X
1558-173X
Abstract
A broadband three-stage pseudo-differential SiGe-interconnection bipolar transistor (HBT) power amplifier (PA) for high-speed communication at around 300 GHz is presented. The amplifier is fabricated in an experimental 130-nm SiGe BiCMOS technology with an $f_{t}/f_{\max }$ of 470/650 GHz. The use of asymmetric coupled line transformers is proposed to facilitate broadband impedance transformation with device reactance compensation at all amplifier interfaces. The amplifier achieves a maximum small-signal power gain of 23.0 dB and a $P_{\mathrm{ sat}}/{\mathrm{ OP}}_{\mathrm{ 1\,dB}}$ up to 9.7/6.7 dBm, respectively. It shows a 3-dB bandwidth of 63 GHz (239–302 GHz) in small-signal operation and 94 GHz (223–317 GHz) when saturated. The amplifier consumes about 360 mW at a 3-V supply voltage yielding a peak power-added efficiency (PAE) of 1.95% at 260 GHz.