학술논문
Exploring the Potential of InCp Precursor in Plasma-Enhanced Atomic Layer Deposition for High-Performance IZO-TFTs
Document Type
Periodical
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(6):3659-3664 Jun, 2024
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
In this study, thin-film transistors (TFTs) with amorphous indium-zinc oxide (IZO) channel were fabricated by plasma-enhanced atomic layer deposition (PEALD). By optimizing the cyclic ratio of laminated ZnO/In2O3, the IZO-TFTs demonstrated a high field-effect channel mobility ( $\mu $ FE) of 42.19 cm2/V s, a threshold voltage ( ${V} _{\text {th}}$ ) of -0.63 V, and a subthreshold swing (SS) of 0.27 V/decade. Moreover, these TFTs exhibited excellent stability during the accelerated test of positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS). This enhanced stability can be attributed to the reduction of defect states achieved through the structural design of the stacked subsequence.