학술논문
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT
Document Type
Conference
Author
Source
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Wide Bandgap Power Devices and Applications (WiPDA), 2013 IEEE Workshop on. :162-165 Oct, 2013
Subject
Language
Abstract
In this paper a comparison between two samples with two different SiN passivation layers was performed. An increment of the drain leakage current increasing the Si concentration in the SiN layer was observed. On the other hand, a similar behavior of dynamic RON was recorded. T-CAD simulations supported our hypothesis on the factors that cause parametric yield loss.