부산대학교 도서관

Silicon carbide-based metal-oxide-semiconductor field effect transistors (SiC mosfets) have been widely applied due to their lower on-resistance and parasitic parameters compared with silicon devices. However, the unexpected crosstalk phenomenon occurs and could lead to false turn-on or gate-oxide damage of the devices. In this article, an accurate predictive method of crosstalk peaks is proposed to provide theoretical guidance for crosstalk evaluation and suppression, which can improve the reliability of the systems. First, the generation of crosstalk and conventional predictive method are illustrated. Second, an improved crosstalk model considering dynamic transfer characteristics and Miller ramp is proposed. Furthermore, the dynamic transfer characteristics and Miller charge of SiC mosfets are obtained experimentally to realize the necessary supplement of the data provided by manufacturers. Finally, the crosstalk peaks predicted by the proposed method are compared experimentally with the actual measured values. The results have verified the proposed method can achieve accurate prediction of crosstalk peaks, and the relative errors of the predicted crosstalk peaks are below 10%.