학술논문

Comparative Analysis and Evaluation of Gate Driver Topologies for Paralleling Silicon Carbide (SiC) Power Modules
Document Type
Conference
Source
2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia) Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia), 2023 11th International Conference on. :2010-2017 May, 2023
Subject
Components, Circuits, Devices and Systems
Engineering Profession
Fields, Waves and Electromagnetics
General Topics for Engineers
Power, Energy and Industry Applications
Robotics and Control Systems
Transportation
MOSFET
Silicon carbide
Multichip modules
Voltage
Tail
Logic gates
Gate drivers
Silicon carbide (SiC)
paralleled power modules
gate driver topologies
current sharing
Language
ISSN
2150-6086
Abstract
Paralleling SiC power modules is usually used to increase the limited current capability of SiC devices. Under very fast switching speeds (