학술논문
Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals
Document Type
Conference
Author
Source
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :170-173 2005
Subject
Language
ISSN
0163-1918
2156-017X
2156-017X
Abstract
This paper for the first time, reports the memory enhancement characteristics and good retention with feasibility of two-bit operation of small scale devices with gate length down to 100 nm, using double layer W nanocrystals embedded in HfAlO for the next generation memory application. Double layer device shows increasing memory window with scaling which will be extremely beneficial