학술논문
A New Linearization Method of GaN HEMT RF-Power Devices Based on Transconductance Compensation
Document Type
Conference
Author
Source
2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT) Microwave and Millimeter Wave Technology (ICMMT), 2023 International Conference on. :1-3 May, 2023
Subject
Language
Abstract
In order to improve the linearity of GaN RF-power devices, this paper proposes a new device structure based on transconductance compensation. The new device is composed of a normally-on device and a normally-off device in parallel. Simulation results show that the new device can have a wider gate voltage swing for the transconductance plateau while other device properties remain unchanged. The first-order and the second-order derivatives of the device transconductance tend to be closer to zero, which can effectively improve the efficiency of the device and suppress the generation of harmonics distortion and intermodulation distortion. It has great application potential in 5G mobile communication base stations, radars, satellite communication and other scenarios.