학술논문
Investigation of DC Characteristics in GaN-on-Si power MIS-HEMTs over a Wide Temperature Range (4 K to 550 K) for Space and Quantum Computing Applications
Document Type
Conference
Author
Source
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2024 8th IEEE. :1-3 Mar, 2024
Subject
Language
Abstract
In this work, GaN-on-Si MIS-HEMT DC characterization results are presented from 4 K to 550 K, to observe the device’s behavior for space applications. The enhancement in threshold voltage $\left(\mathrm{V}_{\text {th }}\right)$, transconductance $\left(\mathrm{g}_{\mathrm{m}}\right)$, and ON resistance ($\mathrm{R}_{\mathrm{ON}, \text { spec }}$) of the device are analyzed as a function of temperature. It is observed that there is no carrier freeze-out effect at 4 K, nor any self-heating effect at 550 K, making it a perfect device for use in quantum computing and space applications.