학술논문
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling
Document Type
Conference
Author
Source
2022 IEEE/MTT-S International Microwave Symposium - IMS 2022 International Microwave Symposium - IMS 2022, 2022 IEEE/MTT-S. :378-381 Jun, 2022
Subject
Language
ISSN
2576-7216
Abstract
In this paper, a model extraction technique suitable for GaN transistors with very large periphery is described. The technique is based on the accurate nonlinear model extraction of a reference size device that is then scaled to a larger periphery preserving its original accuracy. The proposed model has been extensively validated with microwave nonlinear load-pull measurements and with the design of a 200-W S-band power amplifier.