학술논문
Physics-Based Compact Model for CAAC In-Ga-Zn Oxide Multi-Gate FETs with Free Shape of Fin
Document Type
Conference
Author
Source
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2022 6th IEEE. :357-359 Mar, 2022
Subject
Language
Abstract
A new compact model is proposed for accumulation-mode CAAC-IGZO FETs controlled with a top gate and independent back gate. The new core model accounts for all regions of device operation with a various types of fin shapes as geometric parameters. The validity of the core model was verified by TCAD and the obtained compact model was further validated by extracting from the measured characteristics of CAAC-IGZO FETs of various sizes and temperatures.