학술논문
GaN/GaAs(111)B grown by molecular beam epitaxy using hydrazine
Document Type
Conference
Author
Source
Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors Compound semiconductors 1997 Compound Semiconductors, 1997 IEEE International Symposium on. :15-23 1997
Subject
Language
Abstract
Layers of hexagonal GaN were grown on (111)B GaAs substrates by gas source molecular beam epitaxy (GSMBE) using hydrazine as a source of active nitrogen. Nitridation of an AlAs buffer layer was shown to produce a flat layer of AlN. GaN films grown on the AlN surface at growth temperatures above 700/spl deg/C exhibited quasi two-dimensional growth. Photoluminescence spectra of such GaN layers show narrow band-edge emission and no "yellow" defect band.