학술논문

Assembly of large dies fine pitch Cu/low-k FCBGA package with through silicon via (TSV) interposer
Document Type
Conference
Source
2009 11th Electronics Packaging Technology Conference Electronics Packaging Technology Conference, 2009. EPTC '09. 11th. :44-48 Dec, 2009
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Power, Energy and Industry Applications
Photonics and Electrooptics
Assembly
Packaging
Silicon
Through-silicon vias
Flip chip
Bonding
Vehicles
Wire
Soldering
Aluminum
Through silicon via interposer
flip chip
Cu low-k
large die underfill
Language
Abstract
To eliminate the process of stacked with wire bonding interconnection technology, a through via silicon interposer which is used in stacked dies flip chip are assembled in this study currently. In this study, stack assembly process sequence and the sequence effect on solder joints formation 2 nd level joints (between interposer chip and substrate) will be presented. 2 nd level joints will be compared between 1x reflow and 2x reflow process. Underfill materials selection for stacked dies large chip package is established with Aluminum test vehicle without voids and delamination. Some warpage measurement was carried out on the underfilled package. The optimized underfill process was implemented on the actual cu/low-k test vehicle with through silicon via interposer. Effect of different flux type on the bump voids formation will be discussed. Achieved good assembly yield with optimized flip chip process flow, using selected flux in different flip chip bonders.