학술논문
Low-Temperature Processed Tin Oxide Transistor With Ultraviolet Irradiation
Document Type
Periodical
Author
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 40(6):909-912 Jun, 2019
Subject
Language
ISSN
0741-3106
1558-0563
1558-0563
Abstract
Using a novel ultraviolet (UV) irradiation method, we processed a high-performance thin-film transistor (TFT) at low temperatures. Satisfactory device integrity that was demonstrated by high field-effect mobility values of 92 and 43 cm 2 /Vs, small subthreshold slopes of 74 and 81 mV/decade, and ON-current/ OFF-current values of $3\times 10^{6}$ and $7\times 10^{5}$ was achieved for the SnO 2 TFT at low processing temperatures of 180 °C and 100 °C, respectively. The results of X-ray photoelectron spectroscopy showed that the UV irradiation considerably increased the presence of Sn 4+ and reduced the presence of unwanted Sn 2+ , even at low processing temperatures, improving the quality of SnO 2 .