학술논문

X- to Ka- Band Cryogenic LNA Module for Very Long Baseline Interferometry
Document Type
Conference
Source
2020 IEEE/MTT-S International Microwave Symposium (IMS) Microwave Symposium (IMS), 2020 IEEE/MTT-S International. :189-192 Aug, 2020
Subject
Components, Circuits, Devices and Systems
Computing and Processing
Engineering Profession
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Observatories
Radio astronomy
Cryogenics
Radio interferometry
Logic gates
HEMTs
Indium
indium phosphide
HEMT
low noise
amplifier
coaxial module
cryogenic
Language
ISSN
2576-7216
Abstract
We report a new result of a packaged low noise amplifier (LNA) module with wide bandwidth of 5 to 35 GHz and low noise temperature performance of 10 -18 K, while operated at 10 K ambient. The LNA used 3-stages of sub-50 nm gate length, 100% indium channel content indium phosphide (InP) high electron mobility transistors (HEMTs). Wideband cryogenic LNAs are important for future radio astronomy observatories. To our knowledge these results represent the lowest noise achieved in a wideband amplifier from 5–35 GHz.