부산대학교 도서관

In this letter, a threshold switching (TS) selector with Ag doping-based nano-polycrystalline ZnO switching layer (SL) having (002) preferred orientation has been manifested, without incorporating an active Ag metal layer, using a facile co-sputtering deposition technique. The TS selectors with extremely controlled doping of ~0.14 at. % Ag concentration showed remarkable electroforming (EF)-free selection behavior such as gigantic selectivity (~10 11 ), extreme-low off -current (~10 fA), high on -current density (~1.6 MA/cm 2 ), ultra-steep switching slope (~0.8 mV/decade), satisfactory endurance (>10 6 ), fast switch- on speed (~38 ns) and relaxation speed (~64 ns), and high device yield (~90%). Furthermore, selector devices showed reproducible selection behavior with stable threshold voltage (V th ) having merely ~8% variances.