학술논문

Electronics Irradiation With Neutrons at the NEAR Station of the n_TOF Spallation Source at CERN
Document Type
Periodical
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 70(8):1587-1595 Aug, 2023
Subject
Nuclear Engineering
Bioengineering
Neutrons
Atmospheric measurements
Radiation effects
Atmospheric modeling
Random access memory
Monte Carlo methods
Detectors
CERN high-energy accelerator mixed-field facility (CHARM)
FLUKA Monte Carlo simulations
NEAR
neutron time-of-flight (n_TOF)
neutrons
radio-photoluminescence (RPL)
single-event effects (SEEs)
spallation facilities
static random access memory (SRAM)
Language
ISSN
0018-9499
1558-1578
Abstract
We study the neutron field at the NEAR station of the neutron time-of-flight (n_TOF) facility at CERN, through Monte Carlo simulations, well-characterized static random access memories (SRAMs), and radio-photoluminescence (RPL) dosimeters, with the aim of providing neutrons for electronics irradiation. Particle fluxes and typical quantities relevant for electronics testing were simulated for several test positions at NEAR and compared to those at the CERN high-energy accelerator mixed-field facility (CHARM), highlighting similitudes and differences. The SRAM detectors, based on single-event upset (SEU) and single-event latch-up (SEL) counts, each one with a different energy response, and RPL dosimeters were tested in a reference position, and the results were benchmarked to FLUKA simulations. Finally, the neutron spectra at NEAR are compared to those of the most well-known spallation sources and typical environments of interest, for accelerator and atmospheric applications, showing the potential of the facility for electronics irradiation.