학술논문
A 85-Gb/s PAM-4 TIA With 2.2-mApp Maximum Linear Input Current in 28-nm CMOS
Document Type
Periodical
Author
Source
IEEE Solid-State Circuits Letters IEEE Solid-State Circuits Lett. Solid-State Circuits Letters, IEEE. 7:50-53 2024
Subject
Language
ISSN
2573-9603
Abstract
This letter presents a 100-Gb/s CMOS PAM-4 transimpedance amplifier (TIA) with multimilliampere maximum linear input current. A low-noise high-linearity TIA architecture is proposed, leveraging the reconfigurable front-end (FE) TIA and the continuous time linear equalizer (CTLE) synced at multiple gain modes. Implemented in a 28-nm CMOS technology, the TIA achieves bandwidth of more than 24 GHz with transimpedance gain of 65 dB $\Omega $ , while showing an acrlong IRN current density of 10.4 pA/ $\surd $ Hz. The maximum linear input current reaches 2.2 mApp and the total harmonic distortion (THD) is less than 3% for an output swing of 600 mV $_{\rm pp, {\mathrm{ diff}}}$ . The chip consumes power of 56 mW from 1.4 and 1.1-V supply.