학술논문
Low temperature lasing characteristics of GaInAsP double-hetero laser integrated on InP/Si substrate using direct wafer bonding
Document Type
Conference
Author
Source
2016 21st OptoElectronics and Communications Conference (OECC) held jointly with 2016 International Conference on Photonics in Switching (PS) OptoElectronics and Communications Conference (OECC) held jointly with 2016 International Conference on Photonics in Switching (PS), 2016 21st. :1-3 Jul, 2016
Subject
Language
Abstract
We have successfully obtained 2-inch mirror like surface InP/Si wafer by using direct bonding. GaInAsP-InP double-hetero structure laser was grown on InP/Si substrate by MOVPE. Low temperature lasing was attained and show their characteristics.