학술논문
Idss failure investigated by SIMS profiling and TCAD simulation
Document Type
Conference
Author
Source
Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the. :186-190 Jun, 2014
Subject
Language
ISSN
1946-1542
1946-1550
1946-1550
Abstract
A Power MOSFET Idss failure case was studied by SIMS profiling that showed a deeper junction depth between the body/source. TCAD simulation was used to understand the mechanism of the failure.