학술논문

Low-level effects in SBARs and their application to device optimisation
Document Type
Conference
Source
IEEE Symposium on Ultrasonics, 2003 IEEE ultrasonics symposium Ultrasonics, 2003 IEEE Symposium on. 1:182-186 Vol.1 2003
Subject
Signal Processing and Analysis
Fields, Waves and Electromagnetics
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Resonator filters
Optical resonators
Semiconductor device modeling
Magnetic materials
Insertion loss
Laboratories
Acoustic waves
Predictive models
Acoustic materials
Radio frequency
Language
Abstract
Solidly mounted bulk acoustic wave resonator (SBAR) filters for 1.9 GHz, 3 GHz, and 7.9 GHz have been made. For the 1.9 GHz filter a 1-D analytical electro-acoustic model combined with electrical parasitics is shown to accurately predict most features of resonator and filter behaviour. This paper describes how the analysis of these and other low-level effects in resonators allows material data to be determined and spurious modes and related acoustic loss mechanisms to be investigated.