부산대학교 도서관

Copper gallium diselenide (CGS) semiconductor thin films were deposited by three-stage thermal co-evaporation process. Post-deposition treatments and recrystallization were performed at various AgBr doses of 40 mg, 60 mg, and 80 mg after the 2 nd stage. The changes in surface morphology were confirmed by SEM. The electrical properties were also modified, as the resistivity of the film decreases with increasing doses. The device performance after the treatment did not change as expected, as the overall device performance only slightly increases in the case of 60 mg of AgBr. Substantial changes in the fabrication process will therefore be required for better device results.