학술논문
Rapid Thermal Annealing Effect On Valence-band Splitting Behavior in GaNxAs1-x/GaAs
Document Type
Conference
Author
Source
2006 Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on. :456-456 Sep, 2006
Subject
Language
ISSN
2162-2027
2162-2035
2162-2035
Abstract
Our investigation is about rapid thermal annealing(RTA) effect on valence-band splitting(VBS) of GaNxAs1-x. The observed VBS between light- and heavy-hole induced by lattice strain in GaNxAs1-x epilayers is gradually weakened by the RTA process. This could be attributed to strain relax caused by nitrogen reorganization after RTA.