학술논문
State of the Art 58W, 38% PAE X-Band AlGaN/GaN HEMTs Microstrip MMIC Amplifiers
Document Type
Conference
Author
Piotrowicz, S.; Morvan, E.; Aubry, R.; Bansropun, S.; Bouvet, T.; Chartier, E.; Dean, T.; Drisse, O.; Dua, C.; Floriot, D.; diForte-Poisson, M. A.; Gourdel, Y.; Hydes, A. J.; Jacquet, J. C.; Jardel, O.; Lancereau, D.; Mc Lean, J. O.; Lecoustre, G.; Martin, A.; Ouarch, Z.; Reveyrand, T.; Richard, M.; Sarazin, N.; Thenot, D.; Delage, S. L.
Source
2008 IEEE Compound Semiconductor Integrated Circuits Symposium Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE. :1-4 Oct, 2008
Subject
Language
ISSN
1550-8781
2374-8443
2374-8443
Abstract
This paper presents the results obtained on X-Band GaN MMICs developed in the frame of the Kerrigan project launched by the European Defense Agency. A new step was achieved, 58 W of output power with 38% PAE in X-Band were obtained using an 18 mm 2 2-stages amplifier. To our knowledge, these results present a new state-of-the-art of X-Band MMIC power amplifiers.