학술논문
An amorphous SiC/Si heterojunction p-i-n diode for low-noise and high-sensitivity UV detector
Document Type
Periodical
Author
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 39(2):292-296 Feb, 1992
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
The authors report the UV photoresponse of an a-SiC/a-Si heterojunction p-i-n diode with the structure of glass/TCO (transparent conducting oxide, SnO/sub 2/:F)/p-a-SiC:H/i-a-Si:H/n-a-Si:H/Al. The diode has been designed for a high-sensitivity and low-noise UV detector. The diode has its peak responsivity (0.254 A/W) and quantum efficiency (81.5%) at 385 nm. This structure possesses (1) the window effect by using the wide-bandgap a-SiC:H as the front layer (p-layer) and (2) the carrier confinement effect at the p-SiC:H/i-a-Si:H interface. Enhancements are proposed to raise UV response and suppress long-wave responsivity. The diode was designed to be operated under zero external bias to suppress the dark-current-induced noise. Results show a 200% higher UV sensitivity than a GaAsP Schottky photodiode in the 200-400-nm wavelength region.ETX