부산대학교 도서관

Doping technologies for 2-D materials, such as substitutional doping or molecular surface doping, inevitably introduce scattering caused by ionized dopants, resulting in carrier mobility degradation. Moreover, these processes are not CMOS-compatible and therefore hinder practical integration. In this study, we report the realization of remote doping and reduced carrier scattering in molybdenum disulfide (MoS2) field-effect transistor (FET) with silicon oxynitride/alumina (SiOxNy/AlOx) encapsulation layer fabricated by CMOS-compatible process. Charged dopants in SiOxNy remotely dope the underlying MoS2 channel by inserting a high- ${k}$ dielectric AlOx, keeping themselves spatially separated from the channel and contributing to an increase in carrier density and mobility. By depositing a charge modulation layer SiOxNy, it is possible to achieve an electron density change ( $\Delta {n}$ ) of $2.2\times 10^{{12}}$ cm $^{-{2}}$ . Additionally, the remotely doped MoS2 FETs exhibit improved contact and increased room-temperature mobility compared to the pristine MoS2 FETs. Furthermore, the temperature-dependent characterization of the remotely doped MoS2 FET demonstrates significant suppression of charged impurity scattering.