학술논문
S-K Growth of InAs quantum dots on directly-bonded InP/Si substrate using MOVPE
Document Type
Conference
Author
Source
2016 21st OptoElectronics and Communications Conference (OECC) held jointly with 2016 International Conference on Photonics in Switching (PS) OptoElectronics and Communications Conference (OECC) held jointly with 2016 International Conference on Photonics in Switching (PS), 2016 21st. :1-3 Jul, 2016
Subject
Language
Abstract
Stranski-Krastonogh QDs have been successfully grown on InP/Si substrate fabricated by wafer direct bonding. According to PL and AFM measurements, almost the same size and peak wavelength have been obtained with the InP substrate.