학술논문
GaN-HEMTs devices with single- and double-heterostructure for power switching applications
Document Type
Conference
Author
Source
2013 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2013 IEEE International. :3C.1.1-3C.1.7 Apr, 2013
Subject
Language
ISSN
1541-7026
1938-1891
1938-1891
Abstract
We report on an extensive study of single- (SH) and double-heterostructure (DH) HEMTs based on gallium nitride, for power switching applications. The analysis is based on dc, pulsed and breakdown measurements, which were carried out on five different epitaxial structures.