학술논문
InN nanopillar devices with strong photoresponse
Document Type
Conference
Author
Source
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Photovoltaic Specialists Conference (PVSC), 2016 IEEE 43rd. :2790-2793 Jun, 2016
Subject
Language
Abstract
The InN pillars/p-GaN is promising for extended visible and infrared absorption. The higher growth temperature and more V/III could trend toward hexagonal InN pillars epitaxy, fabricated by a low-pressure metal organic chemical vapor deposition. The tensile strain effect and the peak energy blue-shift phenomenon due to higher Fermi-level to acceptor emission were investigated via Raman and photoluminescence (PL) measurements. The high quality InN pillars reveal no indium droplets by X-ray diffraction pattern. A InN pillars photodetection device is demonstrated with extended IR response, and the portion photocurrent of InN detection as high as 13% measured via AM1.5G solar simulated spectra.